Emitter space charge layer transit time in bipolar junction transistors
Abstract
The charge defined emitter space charge layer transit times of double diffused transistors have been calculated using a regional approach, and compared with the corresponding base transit times. The results obtained for emitter space-charge layer transit times have been discussed with reference to Morgan and Smits' capacitance analysis for graded p- n junctions [8].
- Publication:
-
Solid State Electronics
- Pub Date:
- April 1981
- DOI:
- Bibcode:
- 1981SSEle..24..367R
- Keywords:
-
- Bipolar Transistors;
- Emitters;
- Junction Transistors;
- Space Charge;
- Transit Time;
- Capacitance;
- Doped Crystals;
- Microwave Circuits;
- P-N Junctions;
- Surface Diffusion;
- Electronics and Electrical Engineering