Dynamic characteristics of aluminum gallium arsenide-gallium arsenide conventional and quantum well double heterostructure laser diodes
Abstract
The dynamic characteristics of AlxGa1-xAs-GaAs conventional quantum-well double-heterostructure laser diodes were investigated. Spontaneous carrier lifetimes of 2.0 to 2.5 nanoseconds were determined for conventional double-heterostructure laser diodes grown by metalorganic chemical vapor deposition (MO-CVD). Photon lifetimes also were determined. Transient and noise measurements were made on AlxGa1-xAs-GaAs single- and multiple-quantum-well double-heterostructure laser diodes grown by metalorganic chemical vapor deposition (MO-CVD). Active mode locking was performed on standard proton-bombarded strip AlxGa1-xAs-GaAs double-heterostructure laser diodes grown by liquid phase epitaxy.
- Publication:
-
Ph.D. Thesis
- Pub Date:
- 1981
- Bibcode:
- 1981PhDT........50A
- Keywords:
-
- Aluminum Gallium Arsenides;
- Diodes;
- Heterojunction Devices;
- Lasers;
- Liquid Phase Epitaxy;
- Organometallic Compounds;
- Vapor Deposition;
- Lasers and Masers