An evaluation of new techniques for advancing the technology of silicon on corundum

The characteristics and laser annealing of silicon on corundum are analytically and qualitatively discussed, and laser-matter interactions for SOS materials are discussed. Attention is given to particle backscattering and the diffraction of X rays be crystalline materials. Applications of lasers in the formation of semiconductor devices are reviewed in terms of the types of lasers, organic lasers pumped by a coaxial flash lamp, and colorants used in lasers. The implantation of silicon ions into epitaxial silicon on a corundum substrate is described, along with laser and thermal annealing techniques. Finally, the use of laser annealing for the fabrication of MOS on SOS devices is described, along with experimental results. High temperature annealing is shown to degrade the performance of the MOS on SOS structures, while laser annealing produces MOS devices comparable to those realized with conventional methods.