(AlGa)As semiconductor lasers and integrated optoelectronics

The design, fabrication, and testing of the first monolithic integrated optical repeater is described. The use of ion implantation as a technique to fabricate both lasers and field effect transistors is discussed. A theoretical model of the double heterostructure laser is given which treats the p-n junction in the device correctly by using fundamental semiconductor relationships and reasonable assumptions about the device heterointerfaces. The effect of lateral carrier diffusion upon the modulation characteristics of the semiconductor laser is discussed. An approach to effective permittivity formalism is presented which clarifies and extends the use of this technique particularly in the treatment of waveguiding in the semiconductor laser.