A simplified two-dimensional numerical analysis of MOS devices including transient phenomena

A two-dimensional approached for steady state analysis based on the boundary-value (BV) method is described. It solves the current-continuity equations numerically along the channel, with appropriate two-dimensional field coupling to the boundary conditions to include the two-dimensional and distributed-circuit effects. Because the nodes are allocated only along the boundaries and channel, their number is nearly two orders of magnitude smaller and the calculation speed is one order of magnitude faster than those obtained by either the finite-difference or finite-element method. The BV method was employed to analyze the transient characteristics of MOS transistors. The accuracy of the quasi-static model was studied and important transient phenomena such as the delay time caused by channel transit and charge pumping current were investigated through both measurements and simulation. Short-channel effects were also simulated and predicted by the new method.