The dynamics of the optical recording of data in MOSOM structures

A numerical analysis is presented of nonstationary processes arising in MOSOM structures during the optical recording of data. The drift and diffusion of carriers, and their capture by surface states of the semiconductor-oxide interface, and by volume traps are considered. It is shown that the distribution of the electric field strength varies significantly with respect to the thickness of the structure. For a large difference in carrier mobility, the sign of the total space charge corresponds to the sign of the less mobile carriers. Finally, it is found that although the presence of recombination traps somewhat extends the recording time, it acts to prevent the erasure of the data.