Monolithic low noise amplifiers
Abstract
A GaAs monolithic low-noise X-band amplifier has been developed which demonstrates a noise figure of 2.8 dB with an associated gain of 8.5 dB at 12 GHz. The circuits were formed using direction implantation into semiinsulating GaAs, which is the technology of choice for low cost, high volume applications. Monolithic fabrication is described, and RF results are presented.
- Publication:
-
Microwave Journal
- Pub Date:
- October 1981
- Bibcode:
- 1981MiJo...24..103M
- Keywords:
-
- Integrated Circuits;
- Low Noise;
- Microwave Amplifiers;
- Power Amplifiers;
- Satellite Transmission;
- Field Effect Transistors;
- Gallium Arsenides;
- Network Synthesis;
- Radio Receivers;
- Schottky Diodes;
- Superhigh Frequencies;
- Electronics and Electrical Engineering