Sensitivity of radio receivers based on semiconducting devices
Abstract
The sensitivity of radio receivers is estimated and the noise characteristics of amplifier and converter stages based on semiconducting devices (transistors and negative-resistance two-terminal networks) is calculated. The main sources of internal noise of bipolar and field-effect transistors are discussed, as well as semiconducting diodes, and their equivalent noise circuits. The dependence of the noise coefficient on frequency, feedback, and the operating conditions of the stages is studied. Recommendations for circuit element selection are given.
- Publication:
-
Moscow Izdatel Radio Sviaz
- Pub Date:
- 1981
- Bibcode:
- 1981MIzRS....Q....M
- Keywords:
-
- Electromagnetic Noise;
- Radio Receivers;
- Semiconductor Devices;
- Sensitivity;
- Transistor Circuits;
- Bipolar Transistors;
- Equivalent Circuits;
- Field Effect Transistors;
- Frequency Converters;
- Network Analysis;
- Parametric Amplifiers;
- Semiconductor Diodes;
- Signal To Noise Ratios;
- Transistor Amplifiers;
- Communications and Radar