1.55 μm GaInAsP/InP Distributed Feedback Lasers
Abstract
Room temperature operation of 1.55 μm GaInAsP/InP distributed feedback lasers is reported. The laser was fabricated by a single LPE growth cycle on a corrugated substrate. Single longitudinal and transverse mode oscillation was observed up to 1.7 times the threshold current. The temperature dependence of lasing wavelength was about 0.09 nm/deg.
- Publication:
-
Japanese Journal of Applied Physics
- Pub Date:
- July 1981
- DOI:
- Bibcode:
- 1981JaJAP..20L.488M
- Keywords:
-
- Distributed Feedback Lasers;
- Heterojunction Devices;
- Indium Phosphides;
- Infrared Lasers;
- Laser Modes;
- Semiconductor Lasers;
- Temperature Dependence;
- Emission Spectra;
- Feedback Control;
- Gallium Arsenides;
- Gallium Phosphides;
- Indium Arsenides;
- Laser Outputs;
- Liquid Phase Epitaxy;
- Room Temperature;
- Threshold Currents;
- Lasers and Masers