The carrier mobilities in Ga 0.47In 0.53as grown by organo-mettalic CVD and liquid-phase epitaxy
Abstract
The electron and hole mobilities in Ga 0.47In 0.53As grown by organo-metallic chemical vapour deposition are shown to be comparable to those achieved by liquid epitaxial growth. Experimental results at 295 and 77 K are discussed relative to the calculation of the mobility by Takeda and Sasaki.
- Publication:
-
Journal of Crystal Growth
- Pub Date:
- July 1981
- DOI:
- 10.1016/0022-0248(81)90258-X
- Bibcode:
- 1981JCrGr..54..127P