Stochastic treatment of electron multiplication without scattering in dielectrics
Abstract
By treating the emission of optical phonons as a Markov process, a simple analytic method is developed for calculating the electronic ionization rate per unit length for dielectrics. The effects of scattering from acoustic and optical phonons are neglected. The treatment obtains universal functions in recursive form, the theory depending on only two dimensionless energy ratios. A comparison of the present work with other numerical approaches indicates that the effect of scattering becomes important only when the electric potential energy drop in a mean free path for optical-phonon emission is less than about 25% of the ionization potential. A comparison with Monte Carlo results is also given for Teflon.
- Publication:
-
Journal of Applied Physics
- Pub Date:
- May 1981
- DOI:
- 10.1063/1.329139
- Bibcode:
- 1981JAP....52.3575L
- Keywords:
-
- Dielectrics;
- Electron Scattering;
- Ionization Coefficients;
- Stochastic Processes;
- Boltzmann Transport Equation;
- Electric Field Strength;
- Electron States;
- Markov Processes;
- Mean Free Path;
- Solid-State Physics