Single Event Upsets in NMOS Microprocessors
Abstract
Three advanced 16-bit NMOS microprocessors have been observed to suffer single event upset at a rate varying between one upset for every 8 × 1010 to one for every 2 × 1012 n/cm2-upset for cyclotron-produced neutrons with an average energy of 14 MeV. These rates are expected to vary, probably upward, with different types of programs. The errors are inferred to occur in memory-like components of the microprocessors. Many of the errors caused the microcomputer to cease normal operations. This is the first direct experimental verification of logic upsets in microprocessors from neutrons.
- Publication:
-
IEEE Transactions on Nuclear Science
- Pub Date:
- December 1981
- DOI:
- Bibcode:
- 1981ITNS...28.3955G
- Keywords:
-
- Fail-Safe Systems;
- Metal Oxide Semiconductors;
- Microprocessors;
- N-Type Semiconductors;
- Neutron Irradiation;
- Single Event Upsets;
- Ttl Integrated Circuits;
- Error Analysis;
- Logic Circuits;
- Microcomputers;
- Random Access Memory;
- Trace Elements;
- Electronics and Electrical Engineering