Modeling and optimization of monolithic polycrystalline silicon resistors

The use of polycrystalline silicon (polysilicon) as resistor material is important for applications involving integrated circuits. There are, however, a number of difficulties which have to be overcome for such applications. The sensitivity of polysilicon resistivity to doping concentration is very large, especially in the high-resistivity range. The structure of polysilicon and its grain size are sensitive to thermal processing steps. An investigation is conducted to overcome these difficulties. The investigation makes use of a new modified trapping model for monolithic polysilicon resistors. The model is employed as basis for a device analysis and an optimization study.