A new degradation phenomenon in blue light emitting silicon carbide diodes
Abstract
In 6H-SiC blue emitting diodes prepared by sawing epitaxial wafers the development of greenish striations in the luminescing layer is observed together with a decrease in external quantum efficiency. It is proposed that this degradation is due to the development of numerous stacking faults leading to an intermediate (cubic) state of lower bandgap than the 6H modification.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- April 1981
- DOI:
- Bibcode:
- 1981ITED...28..425Z
- Keywords:
-
- Aging (Materials);
- Emission Spectra;
- Light Emitting Diodes;
- Quantum Efficiency;
- Silicon Carbides;
- Degradation;
- Energy Spectra;
- P-N Junctions;
- Stacking Fault Energy;
- Electronics and Electrical Engineering