Monolithic microwave amplifiers formed by ion implantation into LEC gallium arsenide substrates
Abstract
A fabrication procedure for broad-band monolithic power GaAs integrated circuits has been demonstrated which includes formation of via holes through the 100-micron thick GaAs substrate. A selective implant of Si-29 ions into the GaAs substrate is used to dope the FET channel region to 1.2 x 10 to the 17th per cu cm. The ohmic contacts are AuGe/Ni/Pt and the gates are Ti/Pt/Au. A 1.5-micron-thick circuit pattern is achieved using metal rejection assisted by chlorobenzene treatment of AZ1350J photoresist. Using undoped Czochralski wafers of GaAs pulled from a pyrolytic boron nitride crucible, integrated amplifiers have been produced which deliver 28 + or - 0.7 dBm from 5.7 to 11 GHz. These chips are 2 mm x 4.75 mm x 0.1 mm thick.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- February 1981
- DOI:
- 10.1109/T-ED.1981.20309
- Bibcode:
- 1981ITED...28..191D
- Keywords:
-
- Gallium Arsenides;
- Integrated Circuits;
- Ion Implantation;
- Microwave Amplifiers;
- Substrates;
- Broadband Amplifiers;
- Contact Resistance;
- Fabrication;
- Field Effect Transistors;
- Power Amplifiers;
- Silicon Isotopes;
- Electronics and Electrical Engineering