Design, fabrication, and characterization of monolithic microwave GaAs power FET amplifiers
Abstract
The design, fabrication, and characterization of three- and four-stage monolithic GaAs power FET amplifiers are described. Each of the amplifier chips measures 1 mm x 4 mm. Procedures for characterizing these monolithic amplifiers are outlined. Output powers of up to 1 W with 27-dB gain were achieved with a four-stage design near 9 GHz. The circuit topologies used were flexible enough to allow external bondwires to be used as shunt inductors for amplifier operation at C- or S-bands. An output power of 2 W with 28-dB gain and 36.6-percent power-added efficiency was achieved at 3.5 GHz, using a modified four-stage amplifier.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- February 1981
- Bibcode:
- 1981ITED...28..183T
- Keywords:
-
- Amplifier Design;
- Fabrication;
- Field Effect Transistors;
- Gallium Arsenides;
- Microwave Amplifiers;
- Power Amplifiers;
- C Band;
- Integrated Circuits;
- Power Efficiency;
- Power Gain;
- Production Engineering;
- Superhigh Frequencies;
- Transistor Amplifiers;
- Ultrahigh Frequencies;
- Electronics and Electrical Engineering