Compatible VVMOS and NMOS technology for power MOS ICs
Abstract
The paper describes a technology for simultaneously realizing both power VVMOSTs and small signal planar NMOS devices, that together can form a power MOS IC. Device and circuit constraints are discussed and experimental results from a test IC are presented. A fully developed process, based on such a concept, could find application in such circuits as switching regulators and amplifiers.
- Publication:
-
IEE Proceedings: Solid-State Electron Devices
- Pub Date:
- June 1981
- Bibcode:
- 1981IPSSE.128...87L
- Keywords:
-
- Integrated Circuits;
- Metal Oxide Semiconductors;
- N-Type Semiconductors;
- Power Amplifiers;
- Technology Assessment;
- V Grooves;
- Design Analysis;
- Fabrication;
- Gates (Circuits);
- Silicon;
- Switching Circuits;
- Voltage Regulators;
- Electronics and Electrical Engineering