Resistive-gate-induced thermal noise in IGFET's
Abstract
The contribution to the noise in the drain current of an IGFET caused by thermal fluctuations in a resistive gate is calculated. It is found that such induced noise becomes important when the gate conductance becomes comparable to the device transconductance.
- Publication:
-
IEEE Journal of Solid-State Circuits
- Pub Date:
- August 1981
- DOI:
- Bibcode:
- 1981IJSSC..16..414T
- Keywords:
-
- Electrical Resistivity;
- Field Effect Transistors;
- Metal Oxide Semiconductors;
- Thermal Noise;
- Volt-Ampere Characteristics;
- Background Noise;
- Gates (Circuits);
- Noise Temperature;
- Performance Prediction;
- Temperature Effects;
- Electronics and Electrical Engineering