Voltage change across the self-coupled semiconductor laser
Abstract
Several laser diodes have been investigated theoretically and experimentally with reference to voltage changes caused by the onset of optical feedback. The laser diodes studied are various types of CW GaAlAs lasers having a wavelength of about 800 nm, a lasing threshold at a current of less than 100 mA, and an output power of a few mW per facet. The dependence of the voltage changes on the injection current and on the feedback ratio indicates that the origins of the voltage changes are the photoconduction effect and a reduction of the quasi-Fermi level related to the enhanced stimulated emission. The proposed theoretical model is found to be in good agreement with experimental results. Specifications for laser diodes which would produce larger voltage changes at the onset of optical feedback are discussed.
- Publication:
-
IEEE Journal of Quantum Electronics
- Pub Date:
- July 1981
- DOI:
- 10.1109/JQE.1981.1071267
- Bibcode:
- 1981IJQE...17.1216M
- Keywords:
-
- Aluminum Gallium Arsenides;
- Continuous Wave Lasers;
- Electric Potential;
- Feedback Control;
- Optical Coupling;
- Semiconductor Lasers;
- Gallium Arsenide Lasers;
- Injection Lasers;
- Laser Outputs;
- Lasing;
- P-N Junctions;
- Photoconductivity;
- Stimulated Emission;
- Threshold Currents;
- Lasers and Masers