An analysis of distributed Gunn effect

The characteristics of two types of planar distributed gain devices, made of subcritically doped, n-GaAs, are studied: (1) distributed Gunn devices with microstrip electrodes and (2) with coplanar electrodes. The coplanar structures have recently been developed and tested and are known as active medium propagation (AMP) devices. In both types of structures, the microwave field propagates and grows in the direction orthogonal to the DC bias. Because it is not possible to assume that static fields follow a straight path in the cross-section of these structures, rigorous analyses require three-dimensional equation solutions for the wave and charge carriers. Instead, a quasi-linear analysis method is introduced that is easier to handle. Numerical data for the structures are compared with experimental data, and found to be useful for parametric studies in the design of these devices.