Schottky-barrier elevation by ion implantation and implant segregation
Abstract
PtSi Schottky barriers on n-type silicon have been formed with barrier heights up to 1 V, using a thin p-type interfacial layer for barrier elevation. The p-type layers are formed via shallow ion-implantation, followed by segregation to the metal-silicon interface when the silicide is formed. This results in extremely thin p-regions that enable the diodes to have near ideal forward current/voltage characteristics, with n-values of 1.2 to 1.04.
- Publication:
-
Electronics Letters
- Pub Date:
- July 1981
- DOI:
- 10.1049/el:19810337
- Bibcode:
- 1981ElL....17..485T
- Keywords:
-
- Barrier Layers;
- Ion Implantation;
- Schottky Diodes;
- Silicon Junctions;
- Volt-Ampere Characteristics;
- Fabrication;
- Metal Surfaces;
- P-N Junctions;
- Solid-Solid Interfaces;
- Electronics and Electrical Engineering