Very-high-speed back illuminated InGaAs/InP PIN punch-through photodiodes
Abstract
Long-wavelength back-illuminated PIN photodiodes capable of detecting optical signals at multigigabit modulation rates have been fabricated and tested in a stripline circuit. A transit-time-limited response time of about 30 ps has been realized in a 25 micrometers-diameter diode.
- Publication:
-
Electronics Letters
- Pub Date:
- June 1981
- DOI:
- Bibcode:
- 1981ElL....17..431L
- Keywords:
-
- Gallium Arsenides;
- Indium Phosphides;
- Light Modulation;
- P-I-N Junctions;
- Photodiodes;
- Channel Capacity;
- Fabrication;
- High Speed;
- Indium Arsenides;
- Strip Transmission Lines;
- Time Response;
- Transit Time;
- Electronics and Electrical Engineering