Threshold voltage of a narrow-width MOSFET
Abstract
A simple closed-form analytical expression of the threshold voltage for a narrow-width MOSFET is developed. The narrow-width model gives a threshold voltage expression as a function of gate oxide thickness, channel doping concentration, backgate bias and channel width. The theory is compared with experimental results and the agreement is close.
- Publication:
-
Electronics Letters
- Pub Date:
- January 1981
- DOI:
- Bibcode:
- 1981ElL....17...49A
- Keywords:
-
- Field Effect Transistors;
- Metal Oxide Semiconductors;
- Threshold Gates;
- Threshold Voltage;
- Volt-Ampere Characteristics;
- Doped Crystals;
- Gates (Circuits);
- Electronics and Electrical Engineering