Properties, Preparation, and Device Applications of Indium Phosphide
Abstract
A review of the recent work on InP is presented, covering the following properties of this material: bandstructure, electrical transport, lattice dynamics, optical properties, surface properties, thermodynamic properties, and point defects. Preparation techniques are discussed, including synthesis and bulk crystal growth, liquid phase epitaxy of InP and Ga(x)In(1-x)P(y)As(1-y), and chemical vapor deposition. Finally, applications of InP in microwave devices, light-emitting diodes and heterostructure lasers, photodiodes, photocathodes, and solar cells are described.
- Publication:
-
Annual Review of Materials Research
- Pub Date:
- August 1981
- DOI:
- 10.1146/annurev.ms.11.080181.002301
- Bibcode:
- 1981AnRMS..11..441B
- Keywords:
-
- Band Structure Of Solids;
- Crystal Growth;
- Crystal Structure;
- Indium Phosphides;
- Optical Properties;
- Thermodynamic Properties;
- Electrical Resistivity;
- Heterojunction Devices;
- Liquid Phase Epitaxy;
- Photocathodes;
- Photodiodes;
- Solar Cells;
- Surface Properties;
- Vapor Deposition;
- Solid-State Physics