Topographic examination of semiconductor systems

Using the techniques of modulation spectroscopy, a systematic investigation and characterization of gallium arsenide, indium phosphide, and quaternary alloys of InGaAsP have been completed. The effective tool for the topographic examination of implanted materials is the electrolyte electroreflectance (EER) method. The spatial distribution of carrier concentration, the effects of etching, implantation and anneal procedures on the transition energies have been studied. Besides providing the needed 'feedback' information for the materials growth technology program at NRL, the modulation EER technique is shown to be a very unique and sensitive method for the optical characterization of the 3-5 semiconductors and their alloys.