New passivation methods of gaAs
Abstract
With the information provided by previous ESCA studies that there is non-oxidized as in the oxide near the interface, detailed efforts have been undertaken to produce MOS structures without this deficiency. A two step insulator fabrication scheme was used to obtain improved capacitance-voltage characteristics. Other efforts concerned the deposition for different insulators on GaAs. The passivation of quarternary compound semiconductors was undertaken. Results on the experimental investigation regarding the mechanism of light emission from thin MOS structures are reported.
- Publication:
-
Final Report
- Pub Date:
- January 1980
- Bibcode:
- 1980thdg.rept.....A
- Keywords:
-
- Gallium Arsenides;
- Light Emitting Diodes;
- Metal Oxide Semiconductors;
- Passivity;
- Quaternary Alloys;
- Capacitance;
- Capacitance-Voltage Characteristics;
- Electric Potential;
- Fabrication;
- Insulation;
- Oxidation;
- Thickness;
- Solid-State Physics