Characterization of ion-implanted semiconductors

The purpose of this program was to investigate the controlled doping of compound semiconductors by means of ion implantation. This effort has encompassed: (1) the study of the physics of the ion-implantation process; (2) characterization of the as-grown, implanted, and annealed specimens; and (3) optimization of specimen preparation, implantation, and post-implantation treatment for the application of these techniques to electron-device fabrication. In the sections that follow, studies of III-V semiconductors will be described in detail. The analysis and characterization of the specimen by means of photoluminescence, electrical measurements, capacitance-voltage profiling, far-infrared absorption, transmission electron microscopy, and transient-capacitance studies will be discussed. Some of the characterization techniques represent new developments in experimental capabilities. The fabrication of the apparatus as well as the experimental methods used in their application will be treated in detail.