Epitaxial growth of semi-insulating GaAs

This program was aimed at the study of epitaxial growth of high-resistivity GaAs, high-energy implantation of donors into GaAs, and the use of high-power lasers for annealing implanted GaAs layers. We have made significant progress in these three areas. We have grown high-resistivity Cr-doped GaAs layers with good surface morphology using both Ga/Hcl/AsH3/H2 and Ga/AsCl3/H2 processes. N-layers grown on epitaxial buffer layers have consistently shown lower compensation than direct growth on SI GaAs substrates. Cr doped layers have been grown on both SI GaAs and n or - GaAs substrates. Ion implantation into epitaxial buffer layers, in general, leads to higher electron mobility than direct implantation.