Parameter determination techniques for the Gummel-Poon CAD transistor model
Abstract
A method is presented for modeling any bipolar transistor. The method uses the integral charge control model devised by Gummel and Poon (1970), the most general model that fits the computer aided design requirements. The model is accurate for static and dynamic simulations in low and high power applications. Measurements and techniques necessary to accurately determine the required parameters are discussed.
- Publication:
-
PESC 1980; Power Electronics Specialists Conference
- Pub Date:
- 1980
- Bibcode:
- 1980ppes.conf...83B
- Keywords:
-
- Bipolar Transistors;
- Computer Aided Design;
- Mathematical Models;
- Parameter Identification;
- Power Conditioning;
- Volt-Ampere Characteristics;
- Carrier Density (Solid State);
- Charge Carriers;
- Computerized Simulation;
- Electrical Measurement;
- Electronic Control;
- Performance Tests;
- Electronics and Electrical Engineering