Semiconductor measurement technology

This progress report describes NBS activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices. Both in-house and contract efforts are included. The emphasis is on silicon device technologies. Principal accomplishments during this reporting period included (1) development of theoretical expressions for computing resistivity and hole mobility for boron-doped silicon; (2) completion of a study of problems associated with use of a scanning electron microscope for total dose testing of semiconductor devices; (3) completion of a pilot study to evaluate procedures for measuring 1 to 10 micrometer wide clear and opaque lines viewed with transmitted illumination; (4) completion of a preliminary study of test structures for estimating densities of process-induced random faults in device wafers; and (5) completion of an interlaboratory evaluation of the destructive wire-bond pull test. Also reported is other ongoing work on materials characterization by electrical and physical analysis methods, materials and procedures for wafer processing, photolithography, test patterns, and device inspection and test procedures.