Development of test structures for characterization of the fabrication and performance of radiation-hardened Charge-Coupled Device (CCD) imagers
Abstract
Test structures and test methods useful for the characterization of radiation hardened charged coupled device imagers are evaluated. The results of measurements on buried channel gated diodes and buried layer metal oxide semiconductor field effect transistor direct current profilers are reported. Further advantages in the development of the integrated gated diode electrometer are also reported.
- Publication:
-
Annual Report
- Pub Date:
- March 1980
- Bibcode:
- 1980nbs..reptQ....C
- Keywords:
-
- Charge Coupled Devices;
- Radiation Hardening;
- Test Equipment;
- Direct Current;
- Field Effect Transistors;
- Gates (Circuits);
- Metal Oxide Semiconductors;
- Electronics and Electrical Engineering