The design of microwave transistor amplifiers
Abstract
An important element for the design of microwave transistor amplifiers with improved characteristics has become available with the introduction of the GaAs Schottky-barrier gate field effect transistor in the early 1970's. Modern GaAs FET devices are capable of producing noise figures as low as 3 dB at 18 GHz with almost 10 dB associated gain. The GaAs FET offers in its simplest form a device having somewhat more convenient impedances for matching than the bipolar device. Since it is also capable of exhibiting much superior performance above approximately 4 GHz than the bipolar transistor, the present investigation deals exclusively with the theory and the design of amplifiers using GaAs FETs. The measurement of the S-parameters of a GaAs FET is considered along with the transducer power gain in the design of low noise/small signal amplifiers. Examples are given for the design of narrow band and broadband amplifiers. The design of power amplifiers is also discussed.
- Publication:
-
Microwave Solid State Devices and Applications
- Pub Date:
- 1980
- Bibcode:
- 1980mssd.book...88P
- Keywords:
-
- Amplifier Design;
- Field Effect Transistors;
- Microwave Amplifiers;
- Microwave Circuits;
- Network Synthesis;
- Transistor Amplifiers;
- Broadband Amplifiers;
- Equivalent Circuits;
- Gallium Arsenides;
- Microwave Frequencies;
- Power Amplifiers;
- Power Gain;
- Signal To Noise Ratios;
- Temperature Effects;
- Electronics and Electrical Engineering