Study of the physics of insulating films as related to the reliability of metal oxide semiconductor devices
Abstract
This work includes a study of the morphology associated with the oxidation of polycrystalline silicon, a description of moderate field charge injectors using silicon rich SiO2, a technique for studying trapping characteristics using these charge injectors and a review paper on radiation damage in SiO2.
- Publication:
-
Interim Report
- Pub Date:
- May 1980
- Bibcode:
- 1980ibm..rept.....D
- Keywords:
-
- Electrical Insulation;
- Metal Oxide Semiconductors;
- Radiation Damage;
- Silicon Dioxide;
- Silicon Films;
- Ejectors;
- Semiconductors (Materials);
- Silicon Compounds;
- Electronics and Electrical Engineering