Description and verification of the silicon photodiode self-calibrating procedure

The self-calibration procedure for measuring the major quantum efficiency losses of the silicon photodiode involve the determination of: (1) the loss due to reflectance at the SiO2 surface; (2) charge carrier recombination losses at the SiO2-Si interface; and (3) carrier recombination losses in the bulk region beyond the depletion region. As a verification of the technique, two intercomparisons with high-accuracy electrically calibrated cavity radiometers were performed. These were radiant power measurements in the 1 to 3 mW range using amplitude-stabilized CW laser lines at 568 and 633 nm. The agreement in each case was better than 0.1% between thesy two independent measurement techniques.