GaAs junction FET LSI
Abstract
This paper analyses the prospects of GaAs junction field-effect transistors (JFET) for applications to large-scale integrated (LSI) circuit fabrication with gigabit logic capability. Requirements are increasing for military and commercial electronics that can perform logic operations at and above gigabit (1-billion bit/s) data rates. However, silicon integrated circuit technology seems to level off short of the gigabit data-rate capability at LSI circuit complexity. To achieve high-speed signal and data processing the fully ion-implanted planar GaAs E-JFET (enhancement mode JFET) process offers a new technological approach. Experimental results of fabricated test circuits are presented. Projection is advanced for achievable performance characteristics of LSI circuits.
- Publication:
-
EASCON 1980; Electronics and Aerospace Systems Conference
- Pub Date:
- 1980
- Bibcode:
- 1980easc.conf..146Z
- Keywords:
-
- Gallium Arsenides;
- Jfet;
- Large Scale Integration;
- Logic Circuits;
- Network Synthesis;
- Chips (Electronics);
- Fabrication;
- Gates (Circuits);
- Ion Implantation;
- Optimization;
- Electronics and Electrical Engineering