Drag of carriers by photons in narrowgap semiconductors
Abstract
The current representing the drag of carriers by photons is calculated for cubic narrowgap semiconductors allowing for the nonparabolicity and nonsphericity of the valence subbands. A quantitative Kane model is used to obtain a general tensor expression for the photocurrent related to the coefficients representing the nonparabolicity of the lighthole subband and the nonsphericity of the heavyhole subband. The results are given of a numerical calculation of the principal parameters of the drag current in the form of components of the elementary tensors (as a function of temperature) and of the coefficient representing the nonparabolicity (as a function of the wavelength of the incident light) in the case of narrowgap Hg_{1x}Cd_{x}Te solid solutions.
 Publication:

Soviet Physics Journal
 Pub Date:
 May 1980
 DOI:
 10.1007/BF00891631
 Bibcode:
 1980SvPhJ..23..410A