Performance of an infrared power diode of gallium-aluminum-arsenide
Abstract
The apparatus and fluid phase-epitaxial process for the production of (Ga,Al)As:Si-diodes is described. Emission spectra and external quantum efficiency characteristics are discussed in relation to the Al and Si content of the Ga,As-fusion, along with the aging of Ga(1-x)Al(X)As:Si-infrared diodes resulting from this process. The quantum efficiency increases in the range between 840 nm and 870 nm from 15% to 36% at 100 mA. Diodes with a low emission maximum are subject to more rapid degradation.
- Publication:
-
Siemens Forschungs und Entwicklungsberichte
- Pub Date:
- 1980
- Bibcode:
- 1980SiFoE...9..339L
- Keywords:
-
- Aluminum Gallium Arsenides;
- Infrared Instruments;
- Light Amplifiers;
- Liquid Phase Epitaxy;
- Semiconductor Diodes;
- Aging (Materials);
- Emission Spectra;
- Quantum Efficiency;
- Silicon;
- Electronics and Electrical Engineering