Driving the SIPMOS field-effect transistor as a fast power switch
Abstract
The functioning of a SIPMOS FET as a power switch is investigated. Attention is given to three basic configurations, the inverter, the source follower and the transfer switch, which is a combination of both. Models are presented to give a general idea of the performance and to discuss the optimally fast driving conditions. In addition, the underlying principles of appropriate driver configurations are outlined. It is reported that the switching times for both directions are between 75 ns and 100 ns, which includes a rise time of between 25 ns and 50 ns.
- Publication:
-
Siemens Forschungs und Entwicklungsberichte
- Pub Date:
- 1980
- Bibcode:
- 1980SiFoE...9..200H
- Keywords:
-
- Field Effect Transistors;
- Power Conditioning;
- Switching Circuits;
- Transistor Circuits;
- Equivalent Circuits;
- Inverters;
- Oscillographs;
- Rc Circuits;
- Electronics and Electrical Engineering