A qualitative study of the dc performance of SIPMOS transistors

SIPMOS (Siemens Power MOS) transistors are described, noting that they are microcomputer compatible power devices capable of gating currents higher than 10 A with a gate voltage of 5 V. It is shown that their characteristics for low currents between 5 A and 20 A and voltages up to about two thirds of the breakdown voltage resemble those of a pentode and exhibit an almost constant transconductance. Further, for high currents and higher voltages, the characteristics deviate from that of a pentode. It is concluded that SIPMOS transistors can handle currents up to several amperes over a short interval if the effect of their parasitic bipolar transistor is satisfactorily neutralized.