Electric conduction in n-type germanium and cadmium sulfide
Abstract
The impurity conduction of n-type Ge and CdS is calculated via a previously developed theory for impurity bands in doped semiconductors. Rough agreement with experimental data over a wide range of impurity concentration is found. The comparison with AMO-MT calculation shows a big enhancement due to a stronger electron correlation.
- Publication:
-
NASA STI/Recon Technical Report N
- Pub Date:
- November 1980
- Bibcode:
- 1980STIN...8120358F
- Keywords:
-
- Band Structure Of Solids;
- Cadmium Sulfides;
- Electrical Resistivity;
- Germanium Compounds;
- N-Type Semiconductors;
- Additives;
- Green'S Functions;
- Hamiltonian Functions;
- Impurities;
- Wave Functions;
- Electronics and Electrical Engineering