Multiplication effects in polysilicon MIS diodes
Abstract
A metal-semiinsulator-semiconductor (MIS) diode using a thick (2000-2500 A) polysilicon layer has been developed whose saturating current-voltage characteristics depend linearly on light intensity. MIS diodes were fabricated on commercially available silicon slices and current-voltage characteristics were obtained using a bridge type circuit arrangement. The significant features of the Al-polySi-/nSi/ diode are repeatability, ruggedness and easy fabrication compared to the Al-SiO2-Si MIS tunnel diode. Several uses, including application as a photodiode for digital or analog purposes, are under study.
- Publication:
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Solid State Electronics
- Pub Date:
- May 1980
- DOI:
- Bibcode:
- 1980SSEle..23..515A
- Keywords:
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- Mis (Semiconductors);
- Semiconductor Diodes;
- Silicon Junctions;
- Tunnel Diodes;
- Bipolar Transistors;
- Photodiodes;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering