Aluminum-silicon ohmic contact on "shallow" {n +}/{p} junctions
Abstract
In this work various technologies for contacts of Al on n +Si have been experimentally investigated, particularly in view of their suitability to very shallow {n}/{p} junctions. Special test-patterns have been used to measure the contact resistivity, while diodes reverse current density has been checked to evaluate the junction leakage induced by the aluminum-silicon interaction during sintering. Best results are obtained by depositing a thin polysilicon layer on the front surface before the doping process and the Al evaporation. In this case both the requirements of low contact resistivity (< 10 -4 ohm · cm 2) and low junction leakage current are satisfied. Comparison with the conventional Al/Si and AgTi/Si ohmic contacts has been performed.
- Publication:
-
Solid State Electronics
- Pub Date:
- March 1980
- DOI:
- Bibcode:
- 1980SSEle..23..255F
- Keywords:
-
- Aluminum;
- Doped Crystals;
- P-N Junctions;
- Silicon Junctions;
- Current Density;
- Electrical Resistivity;
- Electron Microscopy;
- Fabrication;
- Junction Diodes;
- Metallizing;
- Solar Cells;
- Electronics and Electrical Engineering