Thermodynamic approach to the problem of low-frequency noise. I
Abstract
Using an example of p-n transition it is shown that a semiconductor device is a nonequilibrium structure in the thermodynamic sense. Degradation of complete dynamic equilibrium occurs during operation; the distribution of relaxation periods with the aging of p-n transition follows a nearly logarithmic law and the process rate is determined by the functional stability of the structure.
- Publication:
-
Radiofizika
- Pub Date:
- December 1980
- Bibcode:
- 1980RaF....23.1464V
- Keywords:
-
- Noise Spectra;
- Nonequilibrium Thermodynamics;
- P-N Junctions;
- Semiconductor Devices;
- Aging;
- Relaxation Time;
- Thermodynamic Properties;
- Electronics and Electrical Engineering