Detection of millimeter-wave radiation by Hall-effect sensors
Abstract
A general expression for the volt-watt characteristics of Hall-effect sensors of microwave radiation is obtained on the basis of the kinetic approximation. The volt-watt sensitivity is studied as a function of semiconductor plate thickness for sensors of n-InSb at liquid nitrogen temperature and n-GaAs at room temperature. It is shown that the basic detection mechanism in these cases is not the Hall effect, but the nonuniformity of the waveguide field and carrier heating.
- Publication:
-
Radiotekhnika i Elektronika
- Pub Date:
- September 1980
- Bibcode:
- 1980RaEl...25.1966T
- Keywords:
-
- Hall Effect;
- Microwave Radiometers;
- Millimeter Waves;
- N-Type Semiconductors;
- Radiation Detectors;
- Approximation;
- Electric Fields;
- Electron Flux Density;
- Gallium Arsenides;
- Indium Antimonides;
- Liquid Hydrogen;
- Magnetic Fields;
- Volt-Ampere Characteristics;
- Waveguides;
- Electronics and Electrical Engineering