New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance
Abstract
Measurements of the Hall voltage of a two-dimensional electron gas, realized with a silicon metal-oxide-semiconductor field-effect transistor, show that the Hall resistance at particular, experimentally well-defined surface carrier concentrations has fixed values which depend only on the fine-structure constant and speed of light, and is insensitive to the geometry of the device. Preliminary data are reported.
- Publication:
-
Physical Review Letters
- Pub Date:
- August 1980
- DOI:
- 10.1103/PhysRevLett.45.494
- Bibcode:
- 1980PhRvL..45..494K
- Keywords:
-
- 73.25.+i;
- 06.20.Jr;
- 72.20.My;
- 73.40.Qv;
- Surface conductivity and carrier phenomena;
- Determination of fundamental constants;
- Galvanomagnetic and other magnetotransport effects;
- Metal-insulator-semiconductor structures