Low-field Hall coefficient in dilute copper-hydrogen alloys and in quenched copper

Low-field Hall coefficients have been measured in dilute ChH alloys and in copper containing vacancies in order to investigate the difference between the electron-scattering rates measured in electronic transport coefficients and by de Haas-van Alphen effect. For CuH the relaxation times have the same anisotropy but differ in magnitude by a factor 1.6. In quenched copper the lattice strain around a vacancy gives a substantial contribution to the scattering rates of the neck electrons. This conclusion is in agreement with de Haas-van Alphen data obtained on quenched gold.