A vertical FET structure for microwave power applications
Abstract
The realization of a 1 watt power output, silicon, JFET test structure operating at microwave frequencies (1 GHz.) is presented. The N Channel device uses a selfaligned, ion implanted, vertical design that increases the gate packing density and allows high frequency operation. The selfaligned gate was produced by the use of a plasma dry process. An analytical expression for the current voltage characteristics of the device is obtained. This formulation provides an extension to the wellknown Shockley theory for field effect transistors for the analysis of structures with small length to width ratios operating under velocity saturation conditions. A transit time formulation is used to obtain values for c sub gs (the gate source small signal capacitance), that together with values of g sub m (the small signal forward mutual conductance) found from the analysis indicated above permits the determination of the elements of a first order equivalent circuit. Finally, a large signal characterization method is employed to obtain operating power R.F. data for the test structure at 1 GHz.
 Publication:

Ph.D. Thesis
 Pub Date:
 1980
 Bibcode:
 1980PhDT........62D
 Keywords:

 Field Effect Transistors;
 Microwave Frequencies;
 Semiconductor Junctions;
 Capacitance;
 Current Distribution;
 Gates (Circuits);
 Power Amplifiers;
 Electronics and Electrical Engineering