Small signal analysis of MOS capacitor behavior in the depletion and weak inversion modes
Abstract
The small signal ac behavior of a metal oxide semiconductor capacitor is simulated by a numerical modeling technique. Although the model includes the effect of Shockley Read Hall generationrecombination centers it does not utilize the SRH lifetime concept since this concept is only valid for dc steady state conditions. The numerical simulation reveals that (1) the frequency response to incremental signals as dominated by the generationrecombination process, (2) there is a capacitance peak at a surface potential corresponding to the difference between the Fermi level and the trap level, (3) the capacitance peak shifts toward more positive or more negative potentials as the trap level shifts below or above the intrinsic level respectively, (4) a high concentration of trap centers at the semiconductor surface produces a correspondingly high value of capacitance.
 Publication:

Ph.D. Thesis
 Pub Date:
 1980
 Bibcode:
 1980PhDT.........5I
 Keywords:

 Capacitance;
 Metal Oxide Semiconductors;
 Signal Analysis;
 Simulation;
 Capacitors;
 Models;
 Numerical Analysis;
 Communications and Radar