Balanced transistors. III - Apply microstrip methods to balanced amplifiers

Microstrip construction techniques for high-frequency (above 500 MHz) balanced-transistor amplifiers are discussed. A design is a conventional low-pass ladder-type network, and the high impedance of balanced devices leads to simple transformation techniques. A Butterworth two-section matching circuit is suggested. This design works with devices of all power levels in the DME, IFF, and 800-MHz bands. If desired, three-section transformers and Chebyshev designs could also be used, for broader bandwidth.