Efficient InP Gunn diodes shrink power requirements
Abstract
GaAs and InP pulsed transferred electron (Gunn) diodes are discussed with emphasis on the role of InP Gunn in future applications due to its higher efficiencies. Other advantages of InP over GaAs are noted, including lower input power and lower noise figures. It is believed that the scattering mechanisms which limit the high-frequency performance of transferred electron devices predict higher frequency operation for InP than for GaAs. Attention is also given to a number of present solid-state sources, and the operation of GaAs and InP devices in coaxial, microstrip and waveguide circuits is described.
- Publication:
-
Microwaves
- Pub Date:
- May 1980
- Bibcode:
- 1980MicWa..19...80M
- Keywords:
-
- Energy Conversion Efficiency;
- Gunn Diodes;
- Indium Phosphides;
- Microwave Oscillators;
- Transferred Electron Devices;
- Coaxial Cables;
- Gallium Arsenides;
- Low Noise;
- Microstrip Devices;
- Power Conditioning;
- Power Efficiency;
- Waveguides;
- Electronics and Electrical Engineering